1. K. Graff: Mat. Sci. Eng. B 4, 63 (1989)
2. M.-A. Nicolet, S.S. Lau: Formation and chracterization of transition-metal suicides. VLSI Electronics 6, 330 (Academic, New York 1983)
3. D.A. van Wezep, C.A.J. Ammerlaan: 13
th
Inťl Conf. on Defects in Semiconductors, Coronado 1984, ed. by L.C. Kimmerling, J.M. Parsey (Metallurgical Soc. of AIME, Warrendale, Pennsylvania 1984) p.863
4. Average value calculated from results of J.W. Chen, A.G. Milnes, A. Rohatgi: Solid-State Electron. 22, 801 (1979)
5. L.J. Cheng, D.C. Leung: In Electronic and Optical Properties of Polycrystalline or Impure Semiconductors and Novel Silicon Growth Methods, ed. by K.V. Ravi, B. O’Mara (Electrochem. Soc, Pennington, NJ 1980) p.46