Blocking of deuterium diffusion in poly-Si/Al2O3/HfxSi1−xO2/SiO2 high-k stacks as evidenced by atom probe tomography-Reference-Cited by-同舟云学术

Blocking of deuterium diffusion in poly-Si/Al2O3/HfxSi1−xO2/SiO2 high-k stacks as evidenced by atom probe tomography

Author:

Tu Y.¹^ORCID,Han B.¹,Shimizu Y.¹^ORCID,Kunimune Y.²,Shimada Y.²,Katayama T.²^ORCID,Ide T.²,Inoue M.³,Yano F.⁴,Inoue K.¹,Nagai Y.¹

Affiliation:

1. Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan

2. Technology Division, Renesas Semiconductor Manufacturing Co., Ltd., Hitachinaka, Ibaraki 312-8504, Japan

3. Device Technology Division, Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

4. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

Funder

China Scholarship Council

MEXT | Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference35 articles.

5. J. D. Plummer , M. D. Deal , and P. B. Griffin , Silicon VLSI Technology: Fundamentals, Practice and Modeling ( Prentice Hall, New Jersey, 2000).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献