Effects of strain and alloying on the Hall scattering factor for holes in Si and Si1−xGex
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369290
Reference17 articles.
1. Growth of 100 GHz SiGe-Heterobipolar Transistor (HBT) Structures
2. Hole mobility measurements in heavily doped Si/sub 1-x/Ge/sub x/ strained layers
3. Direct measurement of the Hall factor for holes in relaxed Si1−xGex(0
4. Hall factor and drift mobility for hole transport in strained Si1−xGexalloys
5. Simulation of bandgap narrowing and incomplete ionization in strained Si1−xGex alloys on 〈001〉 Si substrate (for temperatures from 40 K up to 400 K)
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