Electrical Characterization of Semiconductors: I–V, C–V and Hall Measurements
Author:
Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-26434-4_7
Reference33 articles.
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3. Nishimura, T., Kita, K., & Toriumi, A. (2007). Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface. Applied Physics Letters, 91, 123123.
4. Speckbacher, M., Treu, J., Whittles, T. J., Linhart, W. M., Xu, X., Saller, K., Dhanak, V. R., Abstreiter, G., Finley, J. J., Veal, T. D., Koblmüler, G. (2016). Direct measurements of fermi level pinning at the surface of intrinsically n‑type InGaAs nanowires. Nano Letters 16, 5135.
5. Wenner, F. (1916). A method of measuring earth resistivity. Bulletin of the Burreau of Standard., 12, 469.
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