Direct measurement of the Hall factor for holes in relaxed Si1−xGex(0
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111363
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1. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
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3. Room‐temperature 1.3 μm electroluminescence from strained Si1−xGex/Si quantum wells
4. Drift and Conductivity Mobility in Silicon
5. Electrical Properties of Silicon Containing Arsenic and Boron
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