Composition dependence of Schottky barrier heights and bandgap energies of GaNxAs1−x synthesized by ion implantation and pulsed-laser melting
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3041154
Reference24 articles.
1. Current status of research and development of III N V semiconductor alloys
2. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
3. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
4. Epitaxially Self-Assembled Quantum Dots
5. Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
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