Conduction mechanism of resistive switching films in MgO memory devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4712628
Reference24 articles.
1. Resistive Random Access Memory (ReRAM) Based on Metal Oxides
2. Resistive switching in transition metal oxides
3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
4. Voltage-Polarity-Independent and High-Speed Resistive Switching Properties of V-Doped $\hbox{SrZrO}_{3}$ Thin Films
5. Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM
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