Enhancing the electron mobility of SrTiO3 with strain-Reference-Cited by-同舟云学术

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Enhancing the electron mobility of SrTiO3 with strain

Published:2011-03-28 Issue:13 Volume:98 Page:132102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jalan Bharat,Allen S. James,Beltz Glenn E.,Moetakef Pouya,Stemmer Susanne

Funder

Army Research Office

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3571447

Reference16 articles.

1. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

2. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

3. Electric-field-induced superconductivity in an insulator

4. Two-Dimensional Electron Gases at Oxide Interfaces

5. Valence Band Parameters in Silicon from Cyclotron Resonances in Crystals Subjected to Uniaxial Stress

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1. Density functional theory study on the formation mechanism and electrical properties of two-dimensional electron gas in biaxial-strained LaGaO$$_3$$/BaSnO$$_3$$ heterostructure;Scientific Reports;2024-05-04

2. State of the art, trends, and opportunities for oxide epitaxy;APL Materials;2024-04-01

3. Exploring the electronic properties and oxygen vacancy formation in SrTiO3 under strain;Computational Materials Science;2024-01

4. Effect of oxygen nonstoichiometry on electrical conductivity and oxygen transport parameters of Cu-substituted La0.5Sr0.5Co0.8Fe0.2O3-δ perovskite oxides;Journal of Solid State Electrochemistry;2023-07-08

5. Reconstruction of Low Dimensional Electronic States by Altering the Chemical Arrangement at the SrTiO₃ Surface;Advanced Functional Materials;2023-02-28

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