Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368816
Reference11 articles.
1. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
2. Material and device properties of MOCVD grown HEMTs
3. The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures
4. Deep Level Characterization of LP-MOCVD Grown Al0.48In0.52As
5. Modulation spectroscopy as a tool for electronic material characterization
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1. Effect of Piezoelectric Filed on the Optical Properties of (311) A and (311) B Oriented InAlAs/InP Heterostructures;Perovskite and Piezoelectric Materials;2021-01-27
2. Effect of substrate polarity on the optical and vibrational properties of (311)A and (311) B oriented InAlAs/InP heterostructures;Physica E: Low-dimensional Systems and Nanostructures;2019-08
3. Effect of V/III ratio on the optical properties of (3 1 1)A and (3 1 1) B oriented InAlAs/InP heterostructures;Results in Physics;2019-03
4. Study of semiconductor surfaces and interfaces using electromodulation;Surface and Interface Analysis;2001
5. Optimization of In[sub x]Ga[sub 1−x]As/In[sub y]Al[sub 1−y]As high electron mobility transistor structures grown by solid-source molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
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