A numerical study of carrier impact ionization in AlxGa1−xN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4719967
Reference35 articles.
1. SiC and GaN bipolar power devices
2. GaN Power Transistors on Si Substrates for Switching Applications
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4. Al$_{x}$Ga$_{1-x}$N Ultraviolet Avalanche Photodiodes Grown on GaN Substrates
5. Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model
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