Oxidation and roughening of silicon during annealing in a rapid thermal processing chamber
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366629
Reference15 articles.
1. Low Voltage Electron Diffraction Study of the Oxidation and Reduction of Silicon
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3. PREDICT 1.6: Modeling of Metal Silicide Processes
4. Scanning Tunneling Microscopy study of Oxide Nucleation and Oxidation-Induced Roughening at Elevated Temperatures on the Si(001)-(2 × 1) Surface
5. Scanning-tunneling-microscopy observation of thermal oxide growth on Si(111)7×7 surfaces
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2. Dynamics of SiO2 Buried Layer Removal from Si-SiO2-Si and Si-SiO2-SiC Bonded Substrates by Annealing in Ar;Journal of Electronic Materials;2013-11-19
3. ${\bf SiO}_{\bm x}$ Nanowires Grown via the Active Oxidation of Silicon;IEEE Journal of Selected Topics in Quantum Electronics;2011-07
4. Active-oxidation of Si as the source of vapor-phase reactants in the growth of SiOx nanowires on Si;Journal of Applied Physics;2010-10
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