High‐performance GaAs photocathodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323798
Reference11 articles.
1. Effect of gas‐phase stoichiometry on the minority‐carrier diffusion length in vapor‐grown GaAs
2. Influence of Gas-Phase Stoichiometry on the Defect Morphology, Impurity Doping, and Electroluminescence Efficiency of Vapor-Grown GaAs P-N Junctions
3. GaAs-Cs: A new type of photoemitter
4. Pyrometric Measurements of Si, Ge, and GaAs Wafers Between 100° and 700°C
5. Langmuir evaporation from the (100), (111A), and (111B) faces of GaAs
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