Vacancy defect influences on optoelectronic properties for In0.875Ga0.125As0.25P0.75: a first-principles study
Author:
Funder
National Natural Science Foundation of China
Public Welfare project of Ningbo City
Publisher
Springer Science and Business Media LLC
Subject
Atomic and Molecular Physics, and Optics
Link
https://link.springer.com/content/pdf/10.1007/s10043-023-00797-w.pdf
Reference26 articles.
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2. K.A. Mcintosh, J.P. Donnelly, D.C. Oakley, A. Napoleone, D.C. Shaver, Development of Geiger-mode APD arrays for 1.06 μm. In: Proc LEOS Annual Meeting. 2 (2002). 760–761. https://doi.org/10.1109/LEOS.2002.1159529.
3. Olsen, G.H., Szostak, D.J., Zamerowski, T.J., Ettenberg, M.: High-performance GaAs photocathodes. J. Appl. Phys. 48, 1007–1008 (1977). https://doi.org/10.1063/1.323798
4. Sun, Y., Kirby, R.E., Maruyama, T., Mulhollan, G.A., Bierman, J.C., Pianetta, P.: The surface activation layer of GaAs negative electron affinity photocathode activated by Cs, Li, and NF3. Appl. Phys. Lett. 95, 174109 (2009). https://doi.org/10.1063/1.3257730
5. Blankemeier, L., Rezaeifar, F., Garg, A., Kapadia, R.: Integrated photonics for low transverse emittance, ultrafast negative electron affinity GaAs photoemitters. J. Appl. Phys. 126, 33102 (2019). https://doi.org/10.1063/1.5093938
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