Analysis of ordering in GaInP by means of x‐ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353052
Reference18 articles.
1. Interface properties for GaAs/InGaAlP heterojunctions by the capacitance‐voltage profiling technique
2. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
3. Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition
4. High doping performance of lattice matched GaInP on GaAs
5. High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy
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1. Low Growth Temperature MOCVD InGaP for Multi-junction Solar Cells;Energy Procedia;2015-12
2. Determination of structural parameters in heterojunction bipolar transistors by x-ray diffraction with (002) reflection;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-05
3. Effects of ordering and alloy phase separation on the optical emission characteristics of In1−xGaxAsyP1−y layers grown on GaAs substrates;Journal of Applied Physics;2001-05
4. Ordering in GaxIn1−xAsyP1−y grown on GaAs by metalorganic vapour-phase epitaxy;Journal of Crystal Growth;1998-12
5. Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence;Materials Science and Engineering: B;1997-02
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