High doping performance of lattice matched GaInP on GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Low-temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT
2. Extremely high electron mobility in a GaAs‐GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition
3. Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP
4. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
5. High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy
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