Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP;Journal of Applied Physics;2020-07-14
2. Red Emitting VCSEL;Springer Series in Optical Sciences;2012-10-16
3. Influence of surface strain on the MOVPE growth of InGaP epitaxial layers;Applied Physics A;2007-02-22
4. Electrical and morphological properties of ordered InxGa1−xP;Materials Science and Engineering: B;1999-12
5. Single and Double Variant Cupt-B Ordered GalnAs;MRS Proceedings;1999
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