Growth and study of self-organized Ge quantum wires on Si(111) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123884
Reference15 articles.
1. Growth mechanism and clustering phenomena: The Ge-on-Si system
2. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
3. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
4. Low threshold, large To injection laser emission from (InGa)As quantum dots
5. Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy
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