Two‐dimensional arsenic precipitation by In delta doping during low temperature molecular beam epitaxy growth of GaAs or AlGaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111559
Reference12 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
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3. Anomalies in MODFET's with a low-temperature buffer
4. Arsenic precipitate accumulation and depletion zones at AlGaAs/GaAs heterojunctions grown at low substrate temperature by molecular beam epitaxy
5. Low growth temperature AlGaAs current blocking layers for use in surface normal optoelectronic devices
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