Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates-Reference-Cited by-同舟云学术

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Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

Published:2017-01 Issue:1 Volume:62 Page:82-90
ISSN:1063-7745
Container-title:Crystallography Reports
language:en
Short-container-title:Crystallogr. Rep.

Author:

Galiev G. B.,Klimov E. A.,Vasiliev A. L.,Imamov R. M.,Pushkarev S. S.,Trunkin I. N.,Maltsev P. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1134/S1063774517010072.pdf

Reference19 articles.

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3. S. Gupta, M. Y. Frankel, J. A. Valdmanis, et al., Appl. Phys. Lett. 59 (25), 3276 (1991).

4. C. Baker, I. S. Gregory, W. R. Tribe, et al., Appl. Phys. Lett. 83, 4113 (2003).

5. I. S. Gregory, C. Baker, W. R. Tribe, et al., Appl. Phys. Lett. 83, 4199 (2003).

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