Epitaxial low-temperature growth of In0.5Ga0.5As films on GaAs(100) and GaAs(111)A substrates using a metamorphic buffer-Reference-Cited by-同舟云学术

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Epitaxial low-temperature growth of In0.5Ga0.5As films on GaAs(100) and GaAs(111)A substrates using a metamorphic buffer

Published:2017-11 Issue:6 Volume:62 Page:947-954
ISSN:1063-7745
Container-title:Crystallography Reports
language:en
Short-container-title:Crystallogr. Rep.

Author:

Galiev G. B.,Trunkin I. N.,Klimov E. A.,Klochkov A. N.,Vasiliev A. L.,Imamov R. M.,Pushkarev S. S.,Maltsev P. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://link.springer.com/article/10.1134/S1063774517060104/fulltext.html

Reference30 articles.

1. I. S. Gregory, C. Baker, W. R. Tribe, et al., Appl. Phys. Lett. 83 (20), 4199 (2003).

2. C. Baker, I. S. Gregory, E. R. Tribe, et al., Appl. Phys. Lett. 85 (21), 4965 (2004).

3. H. Eusebe, J.-F. Roux, J.-L. Coutaz, et al., J. Appl. Phys. 98, 033711 (2005).

4. A. Krotkus, J. Phys. D: Appl. Phys. 43, 273001 (2010).

5. N. Kim, S.-P. Han, H. Ko, et al., Opt. Express 19 (16), 15397 (2011).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer;Crystallography Reports;2022-05-24

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