Highly resistive annealed low-temperature-grown InGaAs with sub-500fs carrier lifetimes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1824179
Reference14 articles.
1. Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures
2. High-speed photodetector applications of GaAs and InxGa1−xAs/GaAs grown by low-temperature molecular beam epitaxy
3. InxGa1−xAs (x=0.25–0.35) grown at low temperature
4. Structural and electrical properties of low temperature GaInAs
5. Ultrafast 1.55‐μm photoresponses in low‐temperature‐grown InGaAs/InAlAs quantum wells
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