Atomic configuration of segregated B on Si(001) surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120049
Reference14 articles.
1. Striped Phase and Temperature Dependent Step Shape Transition on Highly B-Doped Si(001)-(2×1) Surfaces
2. Comb-shape step formation on Si(001)-2 × 1 surface
3. Spontaneous Formation of Stress Domains on Crystal Surfaces
4. Atomic Structure and Bonding of Boron-Induced Reconstructions on Si(001)
5. Epitaxial growth of ultrathin Si caps on Si(100):B surface studied by scanning tunneling microscopy
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1. Imaging and manipulation of the Si(100) surface by small-amplitude NC-AFM at zero and very low applied bias;Journal of Physics: Condensed Matter;2012-02-07
2. qPlus atomic force microscopy of the Si(100) surface: Buckled, split-off, and added dimers;Applied Physics Letters;2009-08-10
3. Atomic structures of boron-induced protrusion features on Si(100) surfaces;Physical Review B;2008-01-17
4. A Chemical Mechanism for Determining the Influence of Boron on Silicon Epitaxial Growth;Japanese Journal of Applied Physics;2001-11-15
5. Surface Defect Formation in Epitaxial Si Grown on Boron-Doped Substrates by Ultrahigh Vacuum Chemical Vapor Deposition;Japanese Journal of Applied Physics;2001-10-01
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