Photoquenching of hopping conduction in low‐temperature‐grown molecular‐beam‐epitaxial GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107562
Reference9 articles.
1. Device Applications of Low-Temperature-Grown GaAs
2. Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like band
3. Infrared quenching and thermal recovery of thermally stimulated current spectra in GaAs
4. Thermal recovery of photoquenchedEL2 infrared absorption in GaAs
5. Annealing studies of low‐temperature‐grown GaAs:Be
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2. Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers;Journal of Applied Physics;2011-12-15
3. Hopping conduction in GaAs layers grown by molecular-beam epitaxy at low temperatures;Physical Review B;2002-04-04
4. Thermally stimulated current spectroscopy on silicon planar-doped GaAs samples;Journal of Applied Physics;1998-10
5. Permittivity of GaAs epilayers containing arsenic precipitates;Applied Physics Letters;1998-08-03
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