Permittivity of GaAs epilayers containing arsenic precipitates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121943
Reference17 articles.
1. Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of anEL2-like defect
2. Photoquenching of hopping conduction in low‐temperature‐grown molecular‐beam‐epitaxial GaAs
3. Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
4. Molecular Beam Epitaxy of Nonstoichiometric Semiconductors and Multiphase Material Systems
5. DLTS Study on Annealed Low-Temperature GaAs Layers with An n-I(LT)-n Structure Grown by MBE
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