Thermal recovery of photoquenchedEL2 infrared absorption in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.37.2968/fulltext
Reference23 articles.
1. Identification of a defect in a semiconductor:EL2 in GaAs
2. Atomic model for theEL2 defect in GaAs
3. Variation of the midgap electron traps (EL2) in liquid encapsulated Czochralski GaAs
4. Optical and transient capacitance study of EL2 in the absence and presence of other midgap levels
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1. Terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level;Applied Physics Letters;2015-01-12
2. Effect of the vacancy composition of GaAs single crystals on optical quenching of luminescence through EL2 defects;Crystallography Reports;2005-07
3. Excitation photocapacitance study of EL2 in n-GaAs prepared by annealing under different arsenic vapor pressures;Journal of Applied Physics;2005-02
4. Autocatalytic-reaction analysis of the time-evolution of the thermal recovery of EL2 in semi-insulating GaAs;Physica B: Condensed Matter;2004-05
5. The influence of impurities on radiative recombination via EL2 centers in gallium arsenide single crystals;Semiconductors;2004-01
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