Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure
Author:
Affiliation:
1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Funder
Ministry of Education, Culture, Sports, Science, and Technology (MEXT)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4937437
Reference16 articles.
1. A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
2. MOS-Based Spin Devices for Reconfigurable Logic
3. Novel Reconfigurable Logic Gates Using Spin Metal–Oxide–Semiconductor Field-Effect Transistors
4. Nonvolatile static random access memory based on spin-transistor architecture
5. Magnetoresistance of a Spin Metal–Oxide–Semiconductor Field-Effect Transistor with Ferromagnetic MnAs Source and Drain Contacts
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