Magnetoresistance of a Spin Metal–Oxide–Semiconductor Field-Effect Transistor with Ferromagnetic MnAs Source and Drain Contacts
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference24 articles.
1. Spintronics: Fundamentals and applications
2. Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
3. Electrical detection of spin transport in lateral ferromagnet–semiconductor devices
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5. Coherent Spin Transport through a 350 Micron Thick Silicon Wafer
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2. Recent progress in ferromagnetic semiconductors and spintronics devices;Japanese Journal of Applied Physics;2020-12-15
3. Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+−Si source/drain regions;Physical Review B;2020-07-15
4. Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device;Japanese Journal of Applied Physics;2020-02-20
5. New Functionalities and Spintronics Applications of Ferromagnetic Semiconductors and Their Heterostructures;The Journal of The Institute of Electrical Engineers of Japan;2019-10-01
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