Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3028025
Reference13 articles.
1. Ultrathin<tex>$hbox Al_2hbox O_3$</tex>and<tex>$hboxHfO_2$</tex>Gate Dielectrics on Surface-Nitrided Ge
2. Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
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1. Crystallization of long polycrystalline silicon with a long duration pulse from a Nd:YAG laser system;Japanese Journal of Applied Physics;2015-06-12
2. Ba termination of Ge(001) studied with STM;Nanotechnology;2015-03-23
3. Improving the Electrical Properties of Lanthanum Silicate Films on Ge Metal Oxide Semiconductor Capacitors by Adopting Interfacial Barrier and Capping Layers;ACS Applied Materials & Interfaces;2014-04-29
4. High-resolution photoemission comparison study of interface formation between MgO and the atomically clean and Se-passivated Ge(100) surfaces;physica status solidi (RRL) - Rapid Research Letters;2013-06-20
5. Reduction of Charge Trapping in $\hbox{HfO}_{2}$ Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers;IEEE Transactions on Electron Devices;2012-09
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