Annealing kinetics and reversibility of stress-induced leakage current in thin oxides
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121534
Reference5 articles.
1. High-field-induced degradation in ultra-thin SiO/sub 2/ films
2. Stress-induced oxide leakage
3. Mechanism for stress‐induced leakage currents in thin silicon dioxide films
4. Electron Traps and Excess Current Induced by Hot‐Hole Injection into Thin SiO2 Films
5. Reliability extrapolation model for stress-induced-leakage current in thin silicon oxides
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