Electron Traps and Excess Current Induced by Hot‐Hole Injection into Thin SiO2 Films-Reference-Cited by-同舟云学术

Electron Traps and Excess Current Induced by Hot‐Hole Injection into Thin SiO2 Films

Published:1996-10-01 Issue:10 Volume:143 Page:3377-3383
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Kobayashi Kiyoteru¹²,Teramoto Akinobu¹²,Matsui Yasuji¹²,Hirayama Makoto¹²,Yasuoka Akihiko¹²,Nakamura Tadashi¹²

Affiliation:

1. Mitsubishi Electric Corporation, ULSI Laboratory, 4‐1 Mizuhara, Itami, Hyogo 664, Japan

2. Ryouden Semiconductor System Engineering Corporation, 4‐1 Mizuhara, Itami, Hyogo 664, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1837215/pdf

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