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Stress-induced leakage current and random telegraph signal

Published:2009 Issue:1 Volume:27 Page:435
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Teramoto Akinobu,Kumagai Yuki,Abe Kenichi,Fujisawa Takafumi,Watabe Shunichi,Suwa Tomoyuki,Miyamoto Naoto,Sugawa Shigetoshi,Ohmi Tadahiro

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A high-precision current measurement platform applied for statistical measurement of discharge current transient spectroscopy of traps in SiN dielectrics;Japanese Journal of Applied Physics;2021-07-27

2. Operational and reliability aspects of RTS;Random Telegraph Signals in Semiconductor Devices;2017

3. Gate current random telegraph noise and single defect conduction;Microelectronic Engineering;2013-09

4. A Test Circuit for Statistical Evaluation of $p-n$ Junction Leakage Current and its Noise;IEEE Transactions on Semiconductor Manufacturing;2012-08

5. A test structure for statistical evaluation of pn junction leakage current based on CMOS image sensor technology;2010 International Conference on Microelectronic Test Structures (ICMTS);2010-03

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