Planar, embedded InP/GaInAsp‐i‐nphotodiode with very high‐speed response characteristics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97321
Reference2 articles.
1. Small area InGaAs/InP p-i-n photodiodes: fabrication, characteristics and performance of devices in 274 Mb/s and 45 Mb/s lightwave receivers at 1.31 μm wavelength
2. Optoelectronic integrated AlGaAs/GaAsp‐i‐n/field‐effect transistor with an embedded, planarp‐i‐nphotodiode
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3. A room temperature photovoltaic detector for the mid-infrared (1.8-3.4 m) wavelength region;Semiconductor Science and Technology;1998-08-01
4. High performance uncooled InAsSbP/InGaAs photodiodes for the 1.8–3.4 μm wavelength range;Infrared Physics & Technology;1997-12
5. InGaAs PIN photodiodes on semi-insulating InP substrates with bandwidth exceeding 14 GHz;Solid-State Electronics;1995-07
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