Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. The Ga0.47In0.53As homojunction photodiode: A new avalanche photodetector in the near infrared between 1.0 and 1.6 μm;Pearsall;Appl. Phys. Lett.,1978
2. Planar, embedded InP/GaInAs p-i-n photodiode with high-speed response characteristics;Miura;Appl. Phys. Lett.,1986
3. Epitaxx Optoelectronic Devices, High sensitivity 2.5 μm cutoff wavelength InGaAs photodiodes, ETX-GR Series, private communication, pp. 4–94.
4. EG&G Judson, Indium arsenide detector operating notes, private communication, pp. 14–17.
5. Liquid phase epitaxial growth and photoluminescence of Mn-doped InGaAs with InAs-enriched composition;Parry;J. Cryst. Growth,1994
Cited by
38 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献