The Ga0.47In0.53As homojunction photodiode—A new avalanche photodetector in the near infrared between 1.0 and 1.6 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90447
Reference17 articles.
1. Liquid phase epitaxial growth of InGaAs on InP
2. The growth of GaxIn1−xAs on (100) InP by liquid‐phase epitaxy
3. Crack formation in InP‐GaxIn1−xAs‐InP double‐heterostructure fabrication
4. V-6 1.7 µm heterojunction lasers and photodiodes of In.53Ga.47As/InP
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