Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy-Reference-Cited by-同舟云学术

Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy

Published:2015-11-30 Issue:22 Volume:107 Page:221109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shimura Takayoshi¹^ORCID,Matsue Masahiro¹,Tominaga Kohei¹,Kajimura Keiko¹,Amamoto Takashi¹,Hosoi Takuji¹,Watanabe Heiji¹

Affiliation:

1. Department of Material and Life Science, Division of Advanced Science and Biotechnology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

Funder

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936992

Reference34 articles.

1. Electronic-photonic integrated circuits on the CMOS platform

2. Interface-controlled self-align source/drain Ge pMOSFETs using thermally-oxidized GeO2 interfacial layers

3. High-Electron-Mobility $\hbox{Ge/GeO}_{2}$ n-MOSFETs With Two-Step Oxidation

4. Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

5. High-performance Ge-on-Si photodetectors

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