Cathodoluminescence and transmission electron microscopy study of dark line defects in thick In0.2Ga0.8As/GaAs multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351939
Reference26 articles.
1. Nonradiative Recombination at Dislocations in III-V Compound Semiconductors
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3. Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy
4. The identification of dark‐line defects in AlGaAs/InGaAs/GaAs heterostructures
5. The identification of dark‐line defects in AlGaAs/InGaAs/GaAs heterostructures
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