Influence of the surface morphology on the relaxation of low-strained InxGa1 − xAs linear buffer structures-Reference-Cited by-同舟云学术

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Influence of the surface morphology on the relaxation of low-strained InxGa1 − xAs linear buffer structures

Published:1997-12 Issue:3-4 Volume:182 Page:281-291
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Valtueña J.F.,Sacedón A.,Alvarez A.L.,Izpura I.,Calle F.,Calleja E.,MacPherson G.,Goodhew P.J.,Pacheco F.J.,García R.,Molina S.I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. The characteristics of strain-modulated surface undulations formed upon epitaxial Si1−xGex alloy layers on Si

2. Effect of strain on surface morphology in highly strained InGaAs films

3. A model for the distribution of misfit dislocations near epitaxial layer interfaces

4. Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion length

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1. Metamorphic Growth and Multijunction III‐V Solar Cells;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

2. Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch;Epitaxy;2018-03-07

3. Design and characterization of thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy;Semiconductor Science and Technology;2014-02-12

4. Surface Morphology of GaAs/In 0.3 Ga 0.7 As in an Elastic Field of Static Point Defects;Chinese Physics Letters;2014-02

5. Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates;Journal of Applied Physics;2009-12-15

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