Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination-Reference-Cited by-同舟云学术

Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

Author:

Maeda Takuya¹,Narita Tetsuo²^ORCID,Ueda Hiroyuki²,Kanechika Masakazu²,Uesugi Tsutomu²,Kachi Tetsu³,Kimoto Tsunenobu¹,Horita Masahiro¹³⁴,Suda Jun¹³⁴

Affiliation:

1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

2. Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1118, Japan

3. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya 464-8603, Japan

4. Department of Electronics, Nagoya University, Nagoya 464-8603, Japan

Funder

New Energy and Industrial Technology Development Organization

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference46 articles.

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