Dissociative chemisorption of methylsilane on the Si(100) surface
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1458933
Reference30 articles.
1. Single‐crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor deposition
2. Kinetics of silicon carbide CVD: surface decomposition of silacyclobutane and methylsilane
3. Role of the −SiH3 Functional Group in Silane Adsorption and Dissociation on Si(100)
4. Bonding and Thermal Reactivity in Thin a-SiC:H Films Grown by Methylsilane CVD
5. Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane
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1. A Study of the Mechanism of Pyrolytic Decomposition of Methylsilane in the Gas Phase;Theoretical Foundations of Chemical Engineering;2022-08
2. Ethanol adsorption on the Si (111) surface: First principles study;The Journal of Chemical Physics;2012-03-21
3. Adsorption of small hydrocarbon molecules on Si surfaces: Ethylene on Si(001);Physical Review B;2008-03-27
4. Heteroepitaxial growth of 3C–SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane;Journal of Materials Research;2007-05
5. Initial adsorption and C-incorporation of organosilanes at Si(001) investigated by temperature-programmed desorption;Applied Surface Science;2005-04
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