Bonding and Thermal Reactivity in Thin a-SiC:H Films Grown by Methylsilane CVD
Author:
Affiliation:
1. Department of Chemistry, New York University, 100 Washington Square East, New York, New York 10003
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp9718459
Reference69 articles.
1. Present and Future Applications of Amorphous Silicon Carbide
2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
3. Physical Properties of SiC
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