Initial adsorption and C-incorporation of organosilanes at Si(001) investigated by temperature-programmed desorption
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference24 articles.
1. Carbon-containing group IV heterostructures on Si: properties and device applications
2. Solubility of Carbon in Silicon and Germanium
3. Gas-source MBE of SiC/Si using monomethylsilane
4. Initial stage of 3C–SiC growth on Si(0 0 1)–2 × 1 surface using monomethylsilane
5. The effects of carbon incorporation during GSMBE of Si1−yCy and Si1−x−yGexCy: growth dynamics and segregation
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ultrahigh Vacuum Chemical Vapor Deposition of Doped and Intrinsic Si[sub 1−x]C[sub x] Epitaxy from Disilane, Trimethylsilane, and Phosphine;Journal of The Electrochemical Society;2010
2. Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition;Japanese Journal of Applied Physics;2009-11-20
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