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Carbon-containing group IV heterostructures on Si: properties and device applications

  • Published:1998-05 Issue:1-2 Volume:321 Page:11-14
  • ISSN:0040-6090
  • Container-title:Thin Solid Films
  • language:en
  • Short-container-title:Thin Solid Films

Author:

Osten H.J,Barth R,Fischer G,Heinemann B,Knoll D,Lippert G,Rücker H,Schley P,Röpke W

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys;Crystals;2016-12-02

2. Chemical Vapor Deposition of Group IV Alloys on Silicon;Reference Module in Materials Science and Materials Engineering;2016

3. Epitaxial Processes;Materials Processing Handbook;2007-03-28

4. Strain relaxation in thin SiGe epilayers doped with carbon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12

5. Initial adsorption and C-incorporation of organosilanes at Si(001) investigated by temperature-programmed desorption;Applied Surface Science;2005-04
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