Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition

Published:2009-11-20 Issue:11 Volume:48 Page:116002
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakazawa Hideki,Kinoshita Takeshi,Kaimori Yuhta,Asai Yuhki,Suemitsu Maki,Abe Toshimi,Yasui Kanji,Endoh Tetsuo,Itoh Takashi,Narita Yuzuru,Enta Yoshiharu,Mashita Masao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference35 articles.

1. Properties of flexible DLC film deposited by amplitude-modulated RF P-CVD

2. Performance results of MEMS coated with a conformal DLC

3. Improved high-temperature stability of Si incorporated a-C:H films

4. Tribological properties and characterization of diamond-like carbon coatings with silicon prepared by plasma-assisted chemical vapour deposition

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