Focused ion-beam implanted lateral field-effect transistors on bulk silicon

Author:

Crell C.,Friedrich S.,Schreiber H.-U.,Wieck A. D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Quantum reflection of ultracold atoms from thin films, graphene and semiconductor heterostructures;New Journal of Physics;2011-08-16

2. Photonic crystal structures with ultrahigh aspect ratio in lithium niobate fabricated by focused ion beam milling;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-03

3. An accurate and efficient control over the present numerical model of depth of sputtering in focused ion beam milling;Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems;2009-03-01

4. Dot-array implantation for patterned doping of semiconductors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01

5. 24.3: In‐Plane‐Gate Transistors for AMLCD;SID Symposium Digest of Technical Papers;2000-05

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