Hydrogen incorporation into Si‐doped InP deposited by gas‐source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358626
Reference17 articles.
1. Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers
2. Correlation between Hydrogen Diffusion and Donor Neutralization in Hydrogenated n-GaAs: Si
3. Electron mobility studies of the donor neutralization by atomic hydrogen in GaAs doped with silicon
4. Hydrogen Diffusion and Shallow Acceptor Passivation in p-Type InP
5. Effect of hydrogen implantation on shallow and deep levels in GaAs growth by molecular-beam epitaxy
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1. Temperature and Thickness Effects on Electrical Properties of InP Films Deposited by Spray Pyrolysis;Chinese Physics Letters;2009-01
2. The morphology and structural properties of InP thin films deposited by spray pyrolysis method;Journal of Physics and Chemistry of Solids;2008-04
3. Effect of deposition conditions on the InP thin films prepared by spray pyrolysis method;Journal of Materials Science: Materials in Electronics;2006-10
4. Influence of the annealing conditions on the properties of InP thin films;Materials Science and Engineering: B;2006-07
5. Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell;Journal of Applied Physics;2000-06
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