Effect of O+ and Ne+ Implantation on the Surface Characteristics of Thermally Oxidized Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1659098
Reference18 articles.
1. Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon
2. DENSITY OF SiO2–Si INTERFACE STATES
3. Surface Effects of Radiation on Semiconductor Devices*
4. RADIATION EFFECTS IN METAL‐INSULATOR‐SEMICONDUCTOR CAPACITORS AS DETERMINED FROM CONDUCTANCE MEASUREMENTS
5. Effects of ionizing radiation on oxidized silicon surfaces and planar devices
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1. Photoemission Spectroscopy Study on Hydrogen Termination Effect on SiO2/Si Structure Fabricated Using H+-Implanted Si Substrate;Journal of The Electrochemical Society;2020-01-09
2. Encapsulating Ion-Solid Interactions in Metal-Oxide-Semiconductor (MOS) Devices;IEEE Transactions on Nuclear Science;2015-12
3. Analysis of the SiO2 defects originated by phosphorus implantation in MOS structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
4. Interface and Bulk Oxide Damage Induced by Boron Implantation;MRS Proceedings;1985
5. Electron spin resonance study of defects in Si‐SiO2structures induced by As+ion implantation;Journal of Applied Physics;1984-03-15
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