RADIATION EFFECTS IN METAL‐INSULATOR‐SEMICONDUCTOR CAPACITORS AS DETERMINED FROM CONDUCTANCE MEASUREMENTS
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1651933
Reference7 articles.
1. MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS
2. Automatic Plotting of Conductance and Capacitance of Metal‐Insulator‐Semiconductor Diodes or Any Two Terminal Complex Admittance
3. ELECTRON BOMBARDMENT OF MOS CAPACITORS
4. THE EFFECT OF LOW‐ENERGY ELECTRON IRRADIATION OF METAL‐OXIDE‐SEMICONDUCTOR STRUCTURES
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2. Radiation effects and hardening of MOS technology: devices and circuits;IEEE Transactions on Nuclear Science;2003-06
3. Circuit related issues due to radiation in hostile environments;Journal of Electronic Materials;1990-07
4. Radiation Damage;Semiconducting Devices;1976
5. Comparison of interface‐state generation by 25‐keV electron beam irradiation inp‐type andn‐type MOS capacitors;Applied Physics Letters;1975-07-15
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