Highly transparent flexible artificial nociceptor based on forming-free ITO memristor

Author:

Han Xu1,Xu Yimeng1,Sun Bowen1,Xu Ruixue1,Xu Jing1,Hong Wang1,Fu Zhiwei1,Zhu He1,Sun Xin1,Chang Jingjing2ORCID,Qian Kai13ORCID

Affiliation:

1. School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

2. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi'an 710071, China

3. Shenzhen Research Institute of Shandong University, ShenZhen 518057, China

Abstract

Designing a flexible transparent electronic device with biological functions is of great interest for the future wearable integrated artificial intelligence equipment. Nociceptor is a vitally important receptor of sensory neuron, which is responsible for providing a warning signal by recognizing noxious stimuli to reduce potential physical injury. Here, a flexible transparent artificial nociceptor device is demonstrated to simulate the biological nociceptor functions based on the indium tin oxide (ITO) memristor, which exhibits forming-free and reproducible threshold resistive switching behaviors. This structurally simple memristor can imitate the key features of biological nociceptor, including “threshold,” “relaxation,” and “no adaptation” behaviors and sensitization phenomena of hyperalgesia and allodynia upon external stimuli. Finally, an alarm system is built to demonstrate the simplicity and feasibility of this artificial nociceptor for future neuromorphic systems. These results indicate a potential application of the ITO memristor in the future flexible invisible neuromorphic cognitive platform.

Funder

Guangdong Basic and Applied Research Foundation

Shandong Provincial Natural Science Foundation

Qilu Young Scholar

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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