Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1738512
Reference15 articles.
1. An improved inverted /spl delta/-doped GaAs/InGaAs pseudomorphic heterostructure grown by MOCVD
2. Field effect real space transfer transistor
3. A novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor
4. Wide-band transitions for applications in MMIC's and OEIC's
5. Demonstration of photonically controlled GaAs digital/MMIC for RF optical links
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comprehensive study of a Pd–GaAs high electron mobility transistor (HEMT)-based hydrogen sensor;Sensors and Actuators B: Chemical;2007-03
2. Comparative Studies on Double δ-Doped Al[sub 0.3]Ga[sub 0.7]As∕In[sub x]Ga[sub 1−x]As∕GaAs Symmetrically Graded Doped-Channel Field-Effect Transistors;Journal of The Electrochemical Society;2007
3. High-temperature threshold characteristics of a symmetrically graded InAlAs∕InxGa1−xAs∕GaAs metamorphic high electron mobility transistor;Applied Physics Letters;2006-05-29
4. Functional characteristics in asymmetric source/drain InAlAsSb∕InGaAs∕InP δ-doped high electron mobility transistor;Applied Physics Letters;2005-01-17
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