Functional characteristics in asymmetric source/drain InAlAsSb∕InGaAs∕InP δ-doped high electron mobility transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1855387
Reference13 articles.
1. Undoped AlGaN/GaN HEMTs for microwave power amplification
2. Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor
3. Demonstration of photonically controlled GaAs digital/MMIC for RF optical links
4. Enhanced resonant tunneling real-space transfer in δ-doped GaAs/InGaAs gated dual-channel transistors grown by MOCVD
5. Abrupt negative differential resistance in ungated GaAs FET's
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique;Semiconductor Science and Technology;2012-04-27
2. Retraction: “Functional characteristics in asymmetric source/drain InAlAsSb∕InGaAs∕InP δ-doped high electron mobility transistor” [Appl. Phys. Lett. 86, 033505 (2005)];Applied Physics Letters;2005-08-19
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